JPH0521984B2 - - Google Patents

Info

Publication number
JPH0521984B2
JPH0521984B2 JP59022807A JP2280784A JPH0521984B2 JP H0521984 B2 JPH0521984 B2 JP H0521984B2 JP 59022807 A JP59022807 A JP 59022807A JP 2280784 A JP2280784 A JP 2280784A JP H0521984 B2 JPH0521984 B2 JP H0521984B2
Authority
JP
Japan
Prior art keywords
stop valve
vacuum processing
gas supply
gas
mfc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59022807A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60169138A (ja
Inventor
Yoshe Tanaka
Masaharu Saikai
Yoshifumi Ogawa
Kazunori Tsujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2280784A priority Critical patent/JPS60169138A/ja
Publication of JPS60169138A publication Critical patent/JPS60169138A/ja
Publication of JPH0521984B2 publication Critical patent/JPH0521984B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP2280784A 1984-02-13 1984-02-13 真空処理装置 Granted JPS60169138A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2280784A JPS60169138A (ja) 1984-02-13 1984-02-13 真空処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2280784A JPS60169138A (ja) 1984-02-13 1984-02-13 真空処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6086159A Division JP2646998B2 (ja) 1994-04-25 1994-04-25 真空処理方法

Publications (2)

Publication Number Publication Date
JPS60169138A JPS60169138A (ja) 1985-09-02
JPH0521984B2 true JPH0521984B2 (en]) 1993-03-26

Family

ID=12092958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2280784A Granted JPS60169138A (ja) 1984-02-13 1984-02-13 真空処理装置

Country Status (1)

Country Link
JP (1) JPS60169138A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715134B2 (ja) * 1989-02-17 1998-02-18 東京エレクトロン株式会社 処理方法
JPH04180567A (ja) * 1990-11-15 1992-06-26 Nec Kyushu Ltd 半導体製造装置の材料ガス供給システム
KR20020074708A (ko) * 2001-03-21 2002-10-04 삼성전자 주식회사 가스 투입 유량 증대 방법
CN215560801U (zh) * 2021-06-23 2022-01-18 上海晶盟硅材料有限公司 外延掺杂气体的稀释装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812342B2 (ja) * 1981-03-31 1983-03-08 富士通株式会社 連続ドライエッチング方法

Also Published As

Publication number Publication date
JPS60169138A (ja) 1985-09-02

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